Non-volatile memory and control with improved partial page program capability

ABSTRACT

In a non-volatile memory programming scheme where the memory cells are programmed in two or more sequential programming passes, when there is insufficient host data to program at least some of the memory cells during the second pass, some of the memory cells may be programmed to the wrong threshold voltage. This can be prevented by modifying the programming scheme so that this does not occur. In one implementation, this is accomplished by choosing a code scheme, which does not cause the memory cells to be programmed to the wrong threshold voltage during the second programming pass, or by programming the memory cells in accordance with substitute data that would not cause the cells to be programmed to an erroneous state.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a continuation of application Ser. No. 11/381,972,filed on May 5, 2006, now U.S. Pat. No. 7,280,396, which in turn is acontinuation of application Ser. No. 10/830,824, filed Apr. 23, 2004,now U.S. Pat. No. 7,057,939, which applications are incorporated hereinin their entirety by this reference.

BACKGROUND OF THE INVENTION

This invention relates generally to non-volatile semiconductor memoriessuch as electrically erasable programmable read-only memory (EEPROM) andflash EEPROM, and specifically ones with improved partial page programcapability.

Solid-state memory capable of nonvolatile storage of charge,particularly in the form of EEPROM and flash EEPROM packaged as a smallform factor card, has recently become the storage of choice in a varietyof mobile and handheld devices, notably information appliances andconsumer electronics products. Flash memory, both embedded and in theform of a removable card is ideally suited in the mobile and handheldenvironment because of its small size, low power consumption, high speedand high reliability features.

EEPROM utilizes a floating (unconnected) conductive gate, in a fieldeffect transistor structure, positioned over a channel region in asemiconductor substrate, between source and drain regions. A controlgate is then provided over the floating gate. The threshold voltagecharacteristic of the transistor is controlled by the amount of chargethat is retained on the floating gate. That is, for a given level ofcharge on the floating gate, there is a corresponding voltage(threshold) that must be applied to the control gate before thetransistor is turned “on” to permit conduction between its source anddrain regions.

The floating gate can hold a range of charges and therefore can beprogrammed to any threshold voltage level within a threshold voltagewindow. The size of the threshold voltage window is delimited by theminimum and maximum threshold levels of the device, which in turncorrespond to the range of the charges that can be programmed onto thefloating gate. The threshold window generally depends on the memorydevice's characteristics, operating conditions and history. Eachdistinct, resolvable threshold voltage level range within the windowmay, in principle, be used to designate a definite memory state of thecell.

The transistor serving as a memory cell is typically programmed to a“programmed” state by one of two mechanisms. In “hot electroninjection,” a high voltage applied to the drain accelerates electronsacross the substrate channel region. At the same time a high voltageapplied to the control gate pulls the hot electrons through a thin gatedielectric onto the floating gate. In “tunneling injection,” a highvoltage is applied to the control gate relative to the substrate. Inthis way, electrons are pulled from the substrate to the interveningfloating gate.

The memory device may be erased by a number of mechanisms. For EEPROM, amemory cell is electrically erasable, by applying a high voltage to thesubstrate relative to the control gate so as to induce electrons in thefloating gate to tunnel through a thin oxide to the substrate channelregion (i.e., Fowler-Nordheim tunneling.) Typically, the EEPROM iserasable byte by byte. For flash EEPROM, the memory is electricallyerasable either all at once or one or more blocks at a time, where ablock may consist of 512 bytes or more of memory.

EXAMPLES OF NON-VOLATILE MEMORY CELLS

The memory devices typically comprise one or more memory chips that maybe mounted on a card. Each memory chip comprises an array of memorycells supported by peripheral circuits such as decoders and erase, writeand read circuits. The more sophisticated memory devices also come witha controller that performs intelligent and higher level memoryoperations and interfacing. There are many commercially successfulnon-volatile solid-state memory devices being used today. These memorydevices may employ different types of memory cells, each type having oneor more charge storage element.

FIGS. 1A-1E illustrate schematically different examples of non-volatilememory cells.

FIG. 1A illustrates schematically a non-volatile memory in the form ofan EEPROM cell with a floating gate for storing charge. An electricallyerasable and programmable read-only memory (EEPROM) has a similarstructure to EPROM, but additionally provides a mechanism for loadingand removing charge electrically from its floating gate upon applicationof proper voltages without the need for exposure to UV radiation.Examples of such cells and methods of manufacturing them are given inU.S. Pat. No. 5,595,924.

FIG. 1B illustrates schematically a flash EEPROM cell having both aselect gate and a control or steering gate. The memory cell 10 has a“split-channel” 12 between source 14 and drain 16 diffusions. A cell isformed effectively with two transistors T1 and T2 in series. T1 servesas a memory transistor having a floating gate 20 and a control gate 30.The floating gate is capable of storing a selectable amount of charge.The amount of current that can flow through the T1's portion of thechannel depends on the voltage on the control gate 30 and the amount ofcharge residing on the intervening floating gate 20. T2 serves as aselect transistor having a select gate 40. When T2 is turned on by avoltage at the select gate 40, it allows the current in the T1's portionof the channel to pass between the source and drain. The selecttransistor provides a switch along the source-drain channel independentof the voltage at the control gate. One advantage is that it can be usedto turn off those cells that are still conducting at zero control gatevoltage due to their charge depletion (positive) at their floatinggates. The other advantage is that it allows source side injectionprogramming to be more easily implemented.

One simple embodiment of the split-channel memory cell is where theselect gate and the control gate are connected to the same word line asindicated schematically by a dotted line shown in FIG. 1B. This isaccomplished by having a charge storage element (floating gate)positioned over one portion of the channel and a control gate structure(which is part of a word line) positioned over the other channel portionas well as over the charge storage element. This effectively forms acell with two transistors in series, one (the memory transistor) with acombination of the amount of charge on the charge storage element andthe voltage on the word line controlling the amount of current that canflow through its portion of the channel, and the other (the selecttransistor) having the word line alone serving as its gate. Examples ofsuch cells, their uses in memory systems and methods of manufacturingthem are given in U.S. Pat. Nos. 5,070,032, 5,095,344, 5,315,541,5,343,063, and 5,661,053.

A more refined embodiment of the split-channel cell shown in FIG. 1B iswhen the select gate and the control gate are independent and notconnected by the dotted line between them. One implementation has thecontrol gates of one column in an array of cells connected to a control(or steering) line running perpendicular to the word line. The effect isto relieve the word line from having to perform two functions at thesame time when reading or programming a selected cell. Those twofunctions are (1) to serve as a gate of a select transistor, thusrequiring a proper voltage to turn the select transistor on and off, and(2) to drive the voltage of the charge storage element to a desiredlevel through an electric field (capacitive) coupling between the wordline and the charge storage element. It is often difficult to performboth of these functions in an optimum manner with a single voltage. Withthe separate control of the control gate and the select gate, the wordline need only perform function (1), while the added control lineperforms function (2). This capability allows for design of higherperformance programming where the programming voltage is geared to thetargeted data. The use of independent control (or steering) gates in aflash EEPROM array is described, for example, in U.S. Pat. Nos.5,313,421 and 6,222,762.

FIG. 1C illustrates schematically another flash EEPROM cell having dualfloating gates and independent select and control gates. The memory cell10 is similar to that of FIG. 1B except it effectively has threetransistors in series. In this type of cell, two storage elements (i.e.,that of T1-left and T1-right) are included over its channel betweensource and drain diffusions with a select transistor T1 in between them.The memory transistors have floating gates 20 and 20′, and control gates30 and 30′, respectively. The select transistor T2 is controlled by aselect gate 40. At any one time, only one of the pair of memorytransistors is accessed for read or write. When the storage unit T1-leftis being accessed, both the T2 and T1-right are turned on to allow thecurrent in the T1-left's portion of the channel to pass between thesource and the drain. Similarly, when the storage unit T1-right is beingaccessed, T2 and T1-left are turned on. Erase is effected by having aportion of the select gate polysilicon in close proximity to thefloating gate and applying a substantial positive voltage (e.g. 20V) tothe select gate so that the electrons stored within the floating gatecan tunnel to the select gate polysilicon.

FIG. 1D illustrates schematically a string of memory cells organizedinto a NAND cell. A NAND cell 50 consists of a series of memorytransistors M1, M2, . . . Mn (n=4, 8, 16 or higher) daisy-chained bytheir sources and drains. A pair of select transistors S1, S2 controlsthe memory transistors chain's connection to the external via the NANDcell's source terminal 54 and drain terminal 56. In a memory array, whenthe source select transistor S1 is turned on, the source terminal iscoupled to a source line. Similarly, when the drain select transistor S2is turned on, the drain terminal of the NAND cell is coupled to a bitline of the memory array. Each memory transistor in the chain has acharge storage element to store a given amount of charge so as torepresent an intended memory state. A control gate of each memorytransistor provides control over read and write operations. A controlgate of each of the select transistors S1, S2 provides control access tothe NAND cell via its source terminal 54 and drain terminal 56respectively.

When an addressed memory transistor within a NAND cell is read andverified during programming, its control gate is supplied with anappropriate voltage. At the same time, the rest of the non-addressedmemory transistors in the NAND cell 50 are fully turned on byapplication of sufficient voltage on their control gates. In this way, aconductive path is effectively created from the source of the individualmemory transistor to the source terminal 54 of the NAND cell andlikewise for the drain of the individual memory transistor to the drainterminal 56 of the cell. Memory devices with such NAND cell structuresare described in U.S. Pat. Nos. 5,570,315, 5,903,495, 6,046,935.

FIG. 1E illustrates schematically a non-volatile memory with adielectric layer for storing charge. Instead of the conductive floatinggate elements described above, separate regions of the dielectric layerare used as the charge storage element. Such memory devices utilizingdielectric storage element have been described by Eitan et al., “NROM: ANovel Localized Trapping, 2-Bit Nonvolatile Memory Cell,” IEEE ElectronDevice Letters, vol. 21, no. 11, November 2000, pp. 543-545. An ONOdielectric layer extends across the channel between source and draindiffusions. The charge for one data bit is localized in the dielectriclayer adjacent to the drain, and the charge for the other data bit islocalized in the dielectric layer adjacent to the source. For example,U.S. Pat. Nos. 5,768,192 and 6,011,725 disclose a nonvolatile memorycell having a trapping dielectric sandwiched between two silicon dioxidelayers. Multi-state data storage is implemented by separately readingthe binary states of the spatially separated charge storage regionswithin the dielectric.

Memory Array

A memory device typically contains a two-dimensional array of memorycells arranged in rows and columns and addressable by word lines and bitlines. The array can be formed according to an NOR type or a NAND typearchitecture.

Nor Array

FIG. 2 illustrates an example of an NOR array of memory cells. Memorydevices with an NOR type architecture have been implemented with cellsof the type illustrated in FIG. 1B or 1C. Each row of memory cells areconnected by their sources and drains in a daisy-chain manner. Thisdesign is sometimes referred to as a virtual ground design. Each memorycell 10 has a source 14, a drain 16, a control gate 30 and a select gate40. The cells in a row have their select gates connected to word line42. The cells in a column have their sources and drains respectivelyconnected to selected bit lines 34 and 36. In some embodiments where thememory cells have their control gate and select gate controlledindependently, a steering line 36 also connects the control gates of thecells in a column.

Many flash EEPROM devices are implemented with memory cells where eachis formed with its control gate and select gate connected together. Inthis case, there is no need for steering lines and a word line simplyconnects all the control gates and select gates of cells along each row.Examples of these designs are disclosed in U.S. Pat. Nos. 5,172,338 and5,418,752. In these designs, the word line essentially performs twofunctions: row selection and supplying control gate voltage to all cellsin the row for reading or programming.

Nand Array

FIG. 3 illustrates an example of a NAND array of memory cells, such asthat shown in FIG. 1D. Along each column of NAND cells, a bit line iscoupled to the drain terminal 56 of each NAND cell. Along each row ofNAND cells, a source line may connect all their source terminals 54.Also the control gates of the NAND cells along a row are connected to aseries of corresponding word lines. An entire row of NAND cells can beaddressed by turning on the pair of select transistors (see FIG. 1D)with appropriate voltages on their control gates via the connected wordlines. When a memory transistor within the chain of a NAND cell is beingread, the remaining memory transistors in the chain are turned on hardvia their associated word lines so that the current flowing through thechain is essentially dependent upon the level of charge stored in thecell being read. An example of a NAND architecture array and itsoperation as part of a memory system is found in U.S. Pat. Nos.5,570,315, 5,774,397 and 6,046,935.

Block Erase

Programming of charge storage memory devices can only result in addingmore charge to its charge storage elements. Therefore, prior to aprogram operation, existing charge in a charge storage element must beremoved (or erased). Erase circuits (not shown) are provided to eraseone or more blocks of memory cells. A non-volatile memory such as EEPROMis referred to as a “Flash” EEPROM when an entire array of cells, orsignificant groups of cells of the array, is electrically erasedtogether (i.e., in a flash). Once erased, the group of cells can then bereprogrammed. The group of cells erasable together may consist of one ormore addressable erase units. The erase unit or block typically storesone or more pages of data, the page being the unit of programming andreading, although more than one page may be programmed or read in asingle operation. Each page typically stores one or more sectors ofdata, the size of the sector being defined by the host system. Anexample is a sector of 512 bytes of user data, following a standardestablished with magnetic disk drives, plus some number of bytes ofoverhead information about the user data and/or the block in which it isstored.

Read/Write Circuits

In the usual two-state EEPROM cell, at least one breakpoint level isestablished so as to partition the conduction window into two regions.The state of the cell relative to the breakpoint is commonly determinedusing either “current” sense or “voltage” sense. Using current sense, acell is read by applying predetermined, fixed voltages, its gate,source, and drain and the resulting current is compared to either anabsolute value or to a value obtained from a similar cell whosethreshold has been deliberately set to a mid value between the twoextreme states. If the current read is higher than that of thebreakpoint level, the cell is determined to be in one logical state(e.g., a “zero” state). On the other hand, if the current is less thanthat of the breakpoint level, the cell is determined to be in the otherlogical state (e.g., a “one” state). Thus, such a two-state cell storesone bit of digital information. A reference current source, which may beexternally programmable, is often provided as part of a memory system togenerate the breakpoint level current.

In order to increase memory capacity, flash EEPROM devices are beingfabricated with higher and higher density as the state of thesemiconductor technology advances. Another method for increasing storagecapacity is to have each memory cell store more than two states.

For a multi-state or multi-level EEPROM memory cell, the conductionwindow is partitioned into more than two regions by more than onebreakpoint such that each cell is capable of storing more than one bitof data. The information that a given EEPROM array can store is thusincreased with the number of states that each cell can store. EEPROM orflash EEPROM with multi-state or multi-level memory cells have beendescribed in U.S. Pat. No. 5,172,338.

In practice, the memory state of a cell is usually read by sensing theconduction current across the source and drain electrodes of the cellwhen a read level is applied to the control gate. Thus, for each givencharge on the floating gate of a cell, a corresponding conductioncurrent with respect to a fixed reference control gate voltage may bedetected. Similarly, the range of charge programmable onto the floatinggate defines a corresponding threshold voltage window or a correspondingconduction current window.

Alternatively, instead of detecting the conduction current among apartitioned current window (current sense), it is possible to set thethreshold voltage for a given memory state under test at the controlgate and detect if the conduction current is lower or higher than athreshold current (voltage sense). In one implementation the detectionof the conduction current relative to a threshold current isaccomplished by examining the rate the conduction current is dischargingthrough the capacitance of the bit line; if the cell is programmed (ahigher threshold relative to the gate voltage) the discharge currentwill be so small that the relatively large capacitance of the bit linewill not be significantly discharged and the sense amplifier will returna “0” state.

U.S. Pat. No. 4,357,685 discloses a method of programming a 2-stateEPROM in which when a cell is programmed to a given state, it is subjectto successive programming voltage pulses, each time adding incrementalcharge to the floating gate. In between pulses, the cell is read back orverified to determine its source-drain current relative to thebreakpoint level. Programming stops when the current state has beenverified to reach the desired state. The programming pulse train usedmay have increasing period or amplitude.

Prior art programming circuits simply apply programming pulses to stepthrough the threshold window from the erased or ground state until thetarget state is reached. Practically, to allow for adequate resolution,each partitioned or demarcated region would require at least about fiveprogramming steps to transverse. The performance is acceptable for2-state memory cells. However, for multi-state cells, the number ofsteps required increases with the number of partitions and therefore,the programming precision or resolution must be increased. For example,a 16-state cell may require on average at least 40 programming pulses toprogram to a target state.

Memory array 100 is accessible by read/write circuits via a row decoderand a column decoder. As shown in FIGS. 2 and 3, a memory transistor ofa memory cell in the memory array 100 is addressable via a set ofselected word line(s) and bit line(s). The row decoder selects one ormore word lines and the column decoder selects one or more bit lines inorder to apply appropriate voltages to the respective gates of theaddressed memory transistor. Read/write circuits are provided to read orwrite (program) the memory states of addressed memory transistors. Theread/write circuits comprise a number of read/write modules connectablevia bit lines to memory elements in the array.

During read or verify, a sense amplifier determines the current flowingthrough the drain of an addressed memory transistor connected via aselected bit line. The current depends on the charge stored in thememory transistor and its control gate voltage. For example, in amulti-state EEPROM cell, its floating gate can be charged to one ofseveral different levels. For a 4-level cell, it may be used to storetwo bits of data. The level detected by the sense amplifier is convertedby a level-to-bits conversion logic to a set of data bits to be storedin a data latch.

Factors Affecting Read/Write Performance and Accuracy

In order to improve read and program performance, multiple chargestorage elements or memory transistors in an array are read orprogrammed in parallel. Thus, a logical “page” of memory elements areread or programmed together. In existing memory architectures, a rowtypically contains several interleaved pages. All memory elements of apage will be read or programmed together. The column decoder willselectively connect each one of the interleaved pages to a correspondingnumber of read/write modules. For example, in one implementation, thememory array is designed to have a page size of 532 bytes (512 bytesplus 20 bytes of overheads.) If each column contains a drain bit lineand there are two interleaved pages per row, this amounts to 8512columns with each page being associated with 4256 columns. There will be4256 sense modules connectable to read or write in parallel either allthe even bit lines or the odd bit lines. In this way, a page of 4256bits (i.e., 532 bytes) of data in parallel are read from or programmedinto the page of memory elements. The read/write modules forming theread/write circuits can be arranged into various architectures.

A highly compact and high performance non-volatile memory and method ofcontrol are described in U.S. patent application entitled “HighlyCompact Non-Volatile Memory and Method Thereof,” Ser. No. 10/254,483,filed Sep. 24, 2002 by Raul-Adrian Cernea, which is incorporated hereinby reference in its entirety.

FIGS. 4A and 4B illustrate the specific existing technique ofprogramming a 4-state NAND memory cell in an array of the type describedabove. These two figures and the accompanying description of theprogramming process are taken from U.S. Pat. No. 6,522,580, which isincorporated herein by reference in its entirety.

FIGS. 4A and 4B show threshold voltage distributions for a 4-states NANDmemory cell in an array of the type described above, where the floatinggate of the cell in the array stores two bits of data, namely four datastates, in each cell. The curve E represents a distribution of thethreshold levels V_(T) of the cell within the array that are in theerased state (“11” data state), being negative threshold voltage levels.In the event that the cells are set to states other than theabove-described erased state as the initial state of the cells beforeprogramming of the cells, the curve E as used in this application alsorepresents such states; more generally, all such states including theerased state are referred to herein as “reset states.” Threshold voltagedistributions A and B of the storage elements storing “10” and “00” userdata respectively, are shown to be between 0 volts and 1 volt andbetween 1 volt and 2 volts respectively. The curve C shows thedistribution of memory cells that have been programmed to the “01” datastates, being the highest threshold voltage levels more than 2 volts andless then 4.5 volts of the read past voltage. The terms “user data” and“host data” are used interchangeably herein.

Each of the two bits stored in a single memory cell is from a differentlogical page and may be programmed at different times. Each of the twobits carries a different logical page address from each other. The twobits stored in a single memory cell form an ordered set or pair ofvariables of binary values (a more significant bit and a lesssignificant bit). The less significant bit in the user or host data“11”, “10”, “00” and “01” is accessed when the lower page address isinput. The more significant bit of the user or host data is accessedwhen an upper page address is input. Where the data stored comprisesmore than two bits, the ordered set of stored values may include morethan two variables. The logical page designation is different from thedesignation of even and odd or interleaved pages, which relate to thephysical configuration of the memory cells in the memory array. Thedesignating of logical pages can also be extended to where the thresholdwindow is divided into finer divisions to allow for more than 4 statesto be stored in the cells to represent more than two data bits per cell,so that more than two pages are used, in which case they may simply bereferred to numerically, such as the first, second, third pages etc.

As noted above, prior to a program operation, one or more blocks ofmemory cells (also called charge storage elements herein) areelectrically erased together, to the erased state “11.” Then the user orhost data in the data buffer is then used to set the charge storagelevel or threshold level of the charge storage elements. In the firstprogramming pass, the cell's threshold level is set according to thebits from the lower logical page in the data buffer. If that bit is a“1,” nothing is done since the cell is in an erased state as a result ofhaving been earlier erased. However, if that bit is a “0,” the level ofthe cell is increased to the first programmed state A. That concludesthe first programming pass.

In a second programming pass, the cell's threshold level is setaccording to the bit being stored in the data buffer from the upperlogical page. If a “1,” no programming occurs since the cell is in oneof the states E or A, depending upon the programming of the lower pagebit, both of which carry an upper page bit of “1.” If the upper page bitis a “0,” however, the cell is programmed a second time. If the firstpass resulted in the cell remaining in the erased state E, the cell isprogrammed from that state to the highest state C, as shown by the upperarrow in FIG. 4B. If the cell has been programmed into the state A,however, as a result of the first programming pass, the cell is furtherprogrammed in the second pass from that state to the state B, as shownby the lower arrow of FIG. 4B. The result of the second pass is toprogram the cell into the states designated to store a “0” from theupper page without changing the result of the first pass programming ofthe lower page bit.

During the second programming pass, where the upper page bit is a “0,”the cell should be programmed from either the erased state E to thehighest state C or from the state A to the state B, in accordance withthe upper and lower arrows in FIG. 4B. In order to determine whether theprogramming should occur in accordance with the upper or lower arrow, itis necessary to first determine whether the cell is in state E or A. Insome devices, this is performed by a process known as internal read orinternal data load, where a cell that has been programmed during a firstprogramming pass is read to determine whether its threshold levelcorresponds to state E or A.

Field-effect coupling between adjacent floating gates of cells in thememory array of the type described above is described in U.S. Pat. No.5,867,429 of Jian Chen and Yupin Fong, which patent is incorporatedherein in its entirety by this reference. The degree of this coupling isnecessarily increasing as the sizes of memory cell arrays are beingdecreased as the result of improvements of integrated circuitmanufacturing techniques. The problem occurs most pronouncedly betweentwo sets of adjacent cells that have been programmed at different times.One set of cells is programmed to add a level of charge to the floatinggates that corresponds to one set of data. After the second set of cellsis programmed with the second set of data, the charge levels read fromthe floating gates of the first set of cells often appear to bedifferent than programmed because of the effect of the charges on thesecond set of floating gates being coupled with the first. This is knownas the Yupin effect.

The above-described Yupin effect is particularly pronounced when thefloating gates of the second set of cells programmed subsequently areprogrammed to a threshold level much higher than that of the floatinggates of the first set of cells. From FIG. 4B, it is observed that whenthe floating gates of the second set of cells are programmed from theerased state E to the highest state C, the Yupin effect is the mostpronounced because the change in threshold voltage is relatively large.One approach to reduce the Yupin effect is to program the states totheir final value after the succeeding word line has been programmed.This is described in U.S. patent application Ser. No. 10/237,426 filedSep. 6, 2002 by Raul-Adrian Cernea et al entitled “Techniques forReducing Effects of Coupling Between Storage Elements of Adjacent Rowsof Memory Cells,” which is incorporated herein in its entirety byreference. This application introduces the concept of “flag” cellswithin each page that indicate the programming state of that page(interim or final).

Another approach to reduce the Yupin effect is through the use of analternative code scheme than the one set forth in FIGS. 4A and 4B asproposed in U.S. Pat. No. 6,657,891 by Shibata et al., which isincorporated herein in its entirety by reference. The code schemeproposed by Shibata et al. is shown in FIGS. 5A-5C. In FIGS. 5A-5C, itis envisioned that there may be more than two logical pages of data thatcan be represented by the threshold voltage levels of the memory cells,and for this reason, the lower logical page described above is referredto as the first page and upper logical page described above is referredto as the second page in FIGS. 5A-5C. As before, if the first page datato be written into memory cell is “1,” programming is not performed andthe cell remains in the erased state E. If the first page data is a “0,”programming is carried out so that the threshold voltage of the memorycell is raised to one in a distribution or state B′ shown in FIG. 5A.This is in contrast to the process in FIG. 4A where a “0” value of thefirst page data would cause the cell to be programmed to state A. Asshown in FIG. 5B, before second-page data is used for programming thecell, data is written to memory cells adjacent to the one alreadyprogrammed into state B′. As a consequence of the Yupin effect due tothe charges on the floating gates of the subsequently programmedadjacent cells, the threshold voltage distribution B′ has become wideror larger as shown in FIG. 5B compared to that in FIG. 5A. Note thateven the initial distribution B′ of FIG. 5A is wider though always lowerin value than the final distribution B of FIG. 4A/B or FIG. 5C.

When second page data is written, cells originally in the erased state Eare programmed to state A, and those originally in state B′ areprogrammed to state C. This code scheme has the effect of reducing thepotential differences between charge levels of adjacent cells programmedat different times and, therefore, also the field-effect couplingbetween adjacent floating gates and hence the Yupin effect.

While the code scheme described above in reference to FIGS. 5A and 5Cmay be advantageous since it reduces the field-effect coupling withinadjacent floating gates, user data may be programmed to the wrong statesusing such code scheme when there is insufficient user data to fill apage as explained below.

Some non-volatile memory arrays may have 2048 bytes per page. This meansthat 2048 bytes are read or programmed as a single unit in a read orwrite operation. System programming of non-volatile memory systems maystill treat fewer than 2048 bytes, such as 512 bytes, as a unit.Consequently, each of the first and second (e.g. lower and upper) pagesmay contain a number of sectors, such as four sectors. In other words,when a host is transferring user data to the memory array, towards theend of the data transfer, there may be insufficient user data tocompletely program all of the memory cells in the page. Thus, if eachpage has 2048 bytes, there may only be sufficient data to fill the firstpage and one, two, or three sectors, but not all four sectors of thesecond page. This is true where a row of memory cells in the memoryarray contains interleaved pages (where the even page contains all ofthe memory cells in the row controlled by the even bit lines and the oddpage contains all of the memory cells in the row controlled by the oddbit lines) of the type described above, and where a row of memory cellsin the memory array contains a single page. Thus, if each row of 2048memory cells is divided into two interleaved pages, such as odd and evenpages, so that each page contains 1024 bytes, there may only be adequateor sufficient data to fill the even or odd first page and one but notboth of the sectors of the even or odd second page. With the type ofcode scheme illustrated in FIGS. 4A and 4B, this does not create aproblem. However, where a different code scheme is used, such as thoseshown in FIGS. 5A, 5B and 5C described above, this can become a problemas illustrated below.

This issue is illustrated in the example of FIGS. 6A and 6B. In thisexample, a row in a memory array contains 16,384 memory cells forstoring 2048 bytes of data, which constitutes one page. The computerhost system transferring data to or from the memory array does so infour blocks each with 512 bytes. Thus, as illustrated in FIG. 6A, therow of memory cells in the array is divided or grouped into four sectorsor groups 112, 114, 116 and 118, each of the cells in each group storinga first (lower) and second (upper) page of data. As used hereinafter,the terms “sector” and “group” are used interchangeably. As indicated inFIG. 6A, there is enough host data to fill the first or lower page, sothat the four first or lower page sectors are marked “L” to so indicate.Towards the end of the block of user or host data to be programmed,there may only be enough data for programming the lower or first page ofthe four sectors and only the first sector of the second or upper pageof the cells in group 112, which is marked “U” in FIG. 6A to soindicate, so that there is no data left for programming the upper orsecond pages of cells in sectors or groups 114, 116 and 118 of FIG. 6A,where these are left blank without the marker “U” to so indicate.

Before the user data is used for programming the memory cells in thedifferent groups, the data is first loaded into corresponding databuffers or latches (see FIGS. 7, 8A and 8B). The user data stored in thedata latches are then used for programming the memory cells. FIG. 6B isa functional block diagram illustrating the function of the data latchesfor storing the first and second pages of four blocks of data 112′,114′, 116′ and 118′ for programming the four corresponding sectors orgroups 112, 114, 116 and 118 of memory cells of FIG. 6A. After blockerase and before the user or host data is loaded into the data latchesfor programming the cells in the four groups, all of the data latchesare loaded with “1” initially. In the example above, the user data issufficient only for programming the lower or first page of the fourgroups of memory cells and the upper page of cells in group 112 only.Therefore, as illustrated in FIG. 6B, the upper or second page of thedata latches for storing data blocks 114′, 116′ and 118′ have all beenloaded with and continue to contain “1.” As shown in FIG. 6B, forexample, depending on the user data loaded into the lower or first pagein the three blocks of data 114′, 116′ and 118′, some of the memorycells (e.g. those programmed with data 130′, 132′, 134′, 136′ and 138′)would not be programmed where the data in the data latches in the threesectors has the value “11.” However, where the data in the three blocks114′, 116′ and 118′ has the value “10,” (e.g. data 122′, 124′, 126′ and128′) the corresponding memory cells in sectors or groups 114, 116 and118 would be programmed until the threshold voltages or storage levelscorrespond to the state “10” according to a code scheme.

Then when another block of user or host data is subsequently loaded todisplace the default value “1” in the data latches storing blocks 114′,116′ and 118′, such data typically would not all be of the value “1,”but would contain some values that are “0.” Thus, for some of the memorycells (e.g. cells with data 122′-128′) in groups 114, 116 and 118 thathave been programmed to the state “10,” such cells may need to beprogrammed to the state “00” instead, if the subsequent block of user orhost data loads a “0” instead of a “1” as the second or upper page datainto the corresponding data latches for such memory cells. From FIG. 5C,it is observed that the state “10” storage level is the highest level C.Since existing programming techniques do not permit the thresholdvoltage of storage level of individual memory cells to be reduced apartfrom the block erase operation, it would not be feasible to reprogramsuch memory cells from the states “10” to the state “00” if the codescheme of FIGS. 5A-5C is used, which results in the cells beingprogrammed to the wrong state. This is referred to herein as the partialpage program problem when using the code scheme in FIGS. 5A-5C.

SUMMARY OF THE INVENTION

The inventors recognized that, even though some of the memory cells areprogrammed to a higher state (e.g. state B) in the first programmingpass than the state under conventional code schemes to reduce the Yupineffect, when the non-volatile semiconductor memory system is designed sothat the memory cells or charge storage elements are prevented frombeing programmed to the wrong state (e.g. the highest state) during thesecond programming pass when there is insufficient host data, the abovepartial page program problem can be avoided altogether. For example, theelements in such higher state (as a result of the first programmingpass) can be programmed during the second programming pass in a mannerso that they are in a state at charge levels still lower than a yethigher erroneous state (e.g. the highest state). In this manner,programming of the memory cells according to subsequent host or userdata would not be hampered as a result of the above-described partialpage program problem.

In one embodiment, the above result can be achieved by loadingappropriate data into the data latches for programming the cells withoutsufficient upper or second page data after the first programming passbut prior to the second programming pass, so that programming voltagesare not coupled to the elements or cells in a higher state (as a resultof the first programming pass) when programmed during the secondprogramming. In another embodiment, this can be achieved by slightlyaltering the code scheme illustrated in FIG. 5C so that the partial pageprogram problem will not occur.

According to another aspect of the invention, flag cells for storingflag data may be used to indicate the boundary of host or user data,such as the end of host or use data, so that the partial program problemdoes not lead to erroneous results. In one embodiment, the elements aregrouped into a plurality of sectors or groups, each group including atleast one corresponding flag charge storage cell for storing flag datathat indicate whether elements of such group has been programmed or notin the second pass when there is insufficient host data. At least two ofthe plurality of groups are controlled by a common word line. When thereis sufficient host data to program at least one but not all of the atleast two groups during the second pass, flag data is stored in at leastone of the flag charge storage cell(s) in the at least two groups, orthe flag data stored in such flag cell(s) is altered, to indicate aboundary of the host data.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A-1E illustrate schematically different examples of non-volatilememory cells.

FIG. 2 illustrates an example of an NOR array of memory cells.

FIG. 3 illustrates an example of a NAND array of memory cells, such asthat shown in FIG. 1D.

FIGS. 4A and 4B are voltage threshold level distributions thatillustrate an existing technique for programming the memory cell arrayof FIG. 3.

FIGS. 5A-5C are voltage threshold level distributions that illustrateanother existing technique for programming the memory cell array of FIG.3.

FIG. 6A is a schematic diagram of a row of memory cells useful forillustrating the partial page program problem.

FIG. 6B is a conceptual diagram of four blocks of data for programmingthe memory cells in FIG. 6A useful for illustrating the partial pageprogram problem.

FIG. 7 is a schematic block diagram of an individual read/write modulepartitioned into a core portion and a common portion to illustrate oneembodiment of the present invention.

FIG. 8A illustrates schematically a compact memory device having a bankof partitioned read/write stacks, useful for illustrating one embodimentof the present invention.

FIG. 8B illustrates another arrangement of the compact memory deviceshown in FIG. 7.

FIG. 9 is a schematic block diagram of the components of the read/writemodule of FIG. 7 showing in more detail its operation to illustrate oneembodiment of the invention.

FIGS. 10A and 10B are graphical illustrations of voltage threshold leveldistributions and a technique for reading the voltage threshold levelsof memory cells to illustrate one embodiment of the invention.

FIGS. 11A and 11B are tables setting forth the reading of the first andsecond (lower and upper) pages useful for illustrating a method ofreading the voltage threshold levels illustrated in FIGS. 10A and 10B.

FIG. 12 is a graphical illustration of the voltage threshold leveldistributions and the associated values of a code scheme to illustratean alternative embodiment of the invention.

For simplicity and description, identical components are labeled by thesame numerals in this application.

DESCRIPTION OF EXEMPLARY EMBODIMENTS Example Non-Volatile Memory System

FIG. 7 is a schematic block diagram of an individual read/write module200 partitioned into a core portion 210 and a common portion 220,according to a preferred embodiment of the present invention. The coreportion 210 comprises a sense amplifier 212 that determines whether aconduction current in a connected bit line 211 is above or below apredetermined threshold level. As described above, the connected bitline 211 enables access to the drain of an addressed memory cell in anarray.

In one embodiment, the core portion 210 also includes a bit line latch214. The bit line latch is used to set a voltage condition on theconnected bit line 211. In one implementation, a predetermined statelatched in the bit line latch will result in the connected bit line 211being pulled to a state designating program inhibit (e.g., Vdd). Thisfeature is used for program inhibition as will be described below.

The common portion 220 comprises a processor 222, a set of data latches224 and an I/O Interface 226 coupled between the set of data latches 224and a data bus 231. The processor 222 performs computations. Forexample, one of its functions is to determine the memory state of thesensed memory cell and stores the determined data into the set of datalatches. As explained in the background section, a memory cell can holda range of charge and therefore can be programmed to any thresholdvoltage level (i.e., the control gate voltage that just turns on thecell to a predetermined conduction current) within a threshold voltagewindow. The set of data latches 224 is used to store data bitsdetermined by the processor from the current sensed by the senseamplifier during a read operation. It is also used to store user databits imported from the data bus 231 from a host (not shown) during aprogram operation. The imported data bits represent write data meant tobe programmed into the memory. The I/O interface 226 provides aninterface between the set of data latches 224 and the data bus 231.

During read or sensing, the operation is under the control of a statemachine (not shown) that basically controls the supply of differentcontrol gate voltages to the addressed cell, directs the processor toappropriately load the various data latches, and energizes the senseamplifier. As it steps through the various predefined control gatevoltages corresponding to the various memory states supported by thememory, the sense amplifier 212 will trip at one of these voltages. Atthat point the processor 222 determines the resultant memory state byconsideration of the tripping event of the sense amplifier and theinformation about the applied control gate voltage from the statemachine via an input line 223. It then computes a binary encoding forthe memory state and stored the resultant data bits into the set of datalatches 224. The state machine communicates with all of the circuitblocks in module 200.

The SA/bit line latch 214 can also serve double duty both as a latch forlatching the output of the sense amplifier 212, and also as a bit linelatch as described in connection with FIG. 7. Thus, it can either be setby the sense amplifier or by the processor. In a preferredimplementation, the signal from the SA/bit line latch 214 is driven by adriver (not shown) to set the voltage of the selected bit line 211.

Referring to FIG. 7, during program or verify, the data to be programmedis inputted into the set of data latches 224 from the data bus 231. Theprogram operation, under the control of the state machine comprises aseries of programming voltage pulses applied to the control gate of theaddressed cell. Each programming pulse is followed by a read back todetermine if the cell has been programmed to the desired memory state.The processor 222 monitors the read back memory state relative to thedesired memory state. When the two are in agreement, the processor 222sets the bit line latch 214 so as to cause the bit line to be pulled toa state designating program inhibit. This inhibits the cell coupled tothe bit line from further programming even if programming pulses appearon its control gate.

The I/O interface 226 enables data to be transported in or out of theset of data latches 224. As will be seen in FIGS. 8A and 8B, a block ofread/write modules are used in parallel on a memory device to read orprogram a block of data at a time. Typically, the block of read/writemodules has its individual sets of data latches combined to form a shiftregister so that the data latched by the block of read/write modules canbe transferred out serially to the data bus 231. Similarly, program datafor the block of read/write modules can be serially input from the databus 231 and latched into the respective set of data latches.

Compact Read/Write Circuits

One notable feature of the present architecture, for a block ofread/write modules operating in parallel, is the partitioning of eachmodule into a core portion and a common portion, and having the block ofcore portions operating and sharing with substantially lesser number ofcommon portions. This architecture allows duplicative circuits among theindividual read/write modules to be factored out, thereby saving spaceand power. In high density memory chip designs, the saving in space canbe as much as fifty percent of the entire read/write circuits for thememory array. This allows the read/write modules to be densely packed sothat they can simultaneously serve a contiguous row of memory cells ofthe memory array, so that all of the cells in the row can be programmedor read at the same time.

FIG. 8A illustrates schematically a compact memory device having a bankof partitioned read/write stacks, according to one embodiment of thepresent invention. The memory device includes a two-dimensional array ofmemory cells 300, control circuitry 310, and read/write circuits 370.The memory array 300 is addressable by word lines via a row decoder 330and by bit lines via a column decoder 360. The read/write circuits 370is implemented as a bank of partitioned read/write stacks 400 and allowsa block of memory cells to be read or programmed in parallel. In oneembodiment, where a row of memory cells are partitioned into multipleblocks, a block multiplexer 350 is provided to multiplex the read/writecircuits 370 to the individual blocks. Communication among a read/writestack 400 is effected by a stack bus and controlled by a stack buscontroller 430.

The control circuitry 310 cooperates with the read/write circuits 370 toperform memory operations on the memory array 300. The control circuitry310 includes a state machine 312, an on-chip address decoder 314 and apower control module 316. The state machine 312 provides chip levelcontrol of memory operations. The on-chip address decoder 314 providesan address interface between that used by the host or a memorycontroller to the hardware address used by the decoders 330 and 370. Thepower control module 316 controls the power and voltages supplied to theword lines and bit lines during memory operations.

FIG. 8B illustrates a preferred arrangement of the compact memory deviceshown in FIG. 8A. Access to the memory array 300 by the variousperipheral circuits is implemented in a symmetric fashion, on oppositesides of the array so that access lines and circuitry on each side arereduced in half. Thus, the row decoder is split into row decoders 330Aand 330B and the column decoder into column decoders 360A and 360B. Inthe embodiment where a row of memory cells are partitioned into multipleblocks, the block multiplexer 350 is split into block multiplexers 350Aand 350B. Similarly, the read/write circuits are split into read/writecircuits 370A connecting to bit lines from the bottom and read/writecircuits 370B connecting to bit lines from the top of the array 300. Inthis way, the density of the read/write modules, and therefore that ofthe partitioned read/write stacks 400, is essentially reduced by onehalf.

Each partitioned read/write stack 400 in FIG. 8A or 8B essentiallycontains a stack of read/write modules servicing a segment of k memorycells in parallel. Each stack is partitioned into a core stack portionand a common stack portion in the manner shown in FIG. 7. Communicationamong each read/write stack 400 is effected by an interconnecting stackbus (not shown) and controlled by the stack bus controller 430. Controllines (not shown) provide control and clock signals from the stack buscontroller 430 to each of the core portion of the read/write stacks.Similarly, control lines (not shown) provide control and clock signalsfrom the stack bus controller 430 to each of the common portion of theread/write stacks 400.

The entire bank of partitioned read/write stacks 400 operating inparallel allows a block of p cells along a row to be read or programmedin parallel. For example, if r is the number of stacks in the bank, thenp=r*k. One example memory array may have p=512 bytes (512×8 bits), k=8,and therefore r=512. In the preferred embodiment, the block is a run ofthe entire row of cells. In another embodiment, the block is a subset ofcells in the row. For example, the subset of cells could be one half ofthe entire row or one quarter of the entire row. The subset of cellscould be a run of contiguous cells or one every other cell, or one everypredetermined number of cells.

In the embodiment shown in FIG. 8A, there will be p number of read/writemodules, one for each of the p cells. As each stack is serving k memorycells, the total number of read/write stacks in the bank is thereforegiven by r=p/k. In the example where p=512 bytes and k=8, r will be 512.

As mentioned above, one problem encountered in high density and highperformance memory is the need for reading and programming a block ofcontiguous row of cells in parallel and the difficulty in accommodatinga read/write module for every cell.

The accommodation problem is alleviated by a preferred embodiment shownin FIG. 8B in which the peripheral circuits are formed on opposite sidesof the memory array. When the read/write circuits 370A, 370B are formedon opposite sides of the memory array 300, half of the block of p cellswill then be accessed from the top and the other half from the bottomside of the array. Thus, there will be p/2 number of read/write moduleson each side. It follows that the read/write stacks 400 on each sidewill need only serve p/2 number of bit lines or memory cells inparallel, thus the total number of read/write stacks in the bank isgiven by r=p/2 k. In the example where p=512 bytes and k=8, r will be256. This means that only half as many read/write stacks 400 arerequired on each side of the memory array compared to the embodimentshown in FIG. 8A.

In other embodiments, where accommodation or other considerationsdictate even lower density, a row of cells is partitioned into two ormore interleaving blocks of cells. For example, one block of cellsconsists of cells from even columns and the other block of cells fromodd columns. As shown in FIGS. 8A and 8B, the block multiplexer 350 or350A and 350B will be used to switch the bank of partitioned read/writestacks to either the even or odd block. In the embodiment shown in FIG.8B, there will be p/4 number of read/write modules on each side of thearray. In this case, the number of read/write stacks on each of theopposite sides will be r=p/4 k. Thus, more room is provided to fit thefewer read/write modules, but at the expense of reduced performance andthat the read/write block is no longer contiguous.

EMBODIMENTS FOR SOLVING THE PARTIAL PROGRAM PROBLEM

As described above, the partial program problem occurs when a memorycell is programmed using a code scheme such as the one in FIGS. 5A-5Cand 10A, 10B to state B, and there is insufficient user or host data forprogramming the cell during the second programming pass. Since thesecond (upper) page data in the data latch in such event would be thedefault “1” value, such cell would be programmed to state C under thecode scheme in FIGS. 5A-5C, 10A, 10B, unless this is prevented fromhappening as described below. When subsequent user or host data in thenext program operation requires that such cells remain in or beprogrammed to state B, this cannot be done since most designs do notpermit the lowering of the cell threshold level except in block eraseoperations.

One embodiment of the invention is based on the recognition that, formemory cells without user or host upper page data, after the firstprogramming pass but prior to the second programming pass in aprogramming operation, the lower page data in the data latches used forprogramming such memory cells is displaced by appropriate substitutedata to prevent the programming of such memory cells in a secondprogramming pass. Thus, in one implementation of this embodiment, wherethe erased or reset state E represents or corresponds to the data “11,”the first or lower page data in the data latches read from such memorycells in an internal data load operation is displaced by “1.” This isillustrated in more detail in reference to FIG. 9 below.

FIG. 9 is a schematic block diagram showing in more detail theconstruction of data latches in the circuit blocks in FIG. 7. As shownin FIG. 9, the data latches 224 in FIG. 7 include at least three latches224 a, 224 b and 224 c. In one of the examples above, the module 200 ina read/write stack 400 is used for controlling the reading and writingof a corresponding memory cell amongst the k cells served by the stack.Therefore, the latches 224 a-224 c may each be a 1-bit latch. During aprogramming operation, user or host data is loaded into the latchesthrough data bus 231 and I/O interface 226. In one embodiment, a firstor lower data bit is first loaded through bus 231 and interface 226 intolatch 224 a. This is performed by all of the read/write modules 200 ineach of the stacks 400 in the bank of stacks of FIGS. 7, 8A, 8B inparallel for programming an entire page. The entire page may consist ofall of the memory cells in one row in the memory array 300.Alternatively, the entire page may consist only of the memory cells in aportion of a row in the memory array 300, such as the odd or even pagesin the case of interleaved pages in a row of cells.

The memory cells in the page are then programmed using the lower orfirst page data in the data latches 224 a in all of the modules 200 inthe bank of stacks 400. After the memory cells in a page have beenprogrammed using the first or lower page data in the latches 224 a,second or upper page data is loaded through bus 231 and interface 226into latch 224 a, which data is shifted by processor 222 to latch 224 c,in preparation for the second pass programming of the memory cells. Asnoted above, for second pass programming, it is necessary to know thethreshold voltages or threshold levels of the memory cells after thefirst programming pass prior to second pass programming. In oneembodiment, this is performed by an internal data load operation wherethe currents in the memory cells in the page are sensed by means ofsense amplifiers 212 in the modules 200 in the bank of stacks 400. Thethreshold voltages or storage levels of such cells and datacorresponding to such are then determined by processor 222 in themodules and stored in latches 224 a in the modules. Where there issufficient upper or second page data for programming the page in asecond pass programming, the data stored in latch 224 a and user or hostupper or second page data in latch 224 c are used for programming thememory cells in the page in the second pass programming. This is thecase for programming the cells in sector 112 of FIG. 6A in the examplebelow.

However, where there is insufficient upper or second page data forprogramming the entire page, this is first detected by control circuitry310. In the example illustrated in FIGS. 6A and 6B, while there issufficient data to program the first or lower page of the memory cells,there is only enough data for the first sector 112. Thus, the host oruser data ends with such sector, and there is no more upper or secondpage data for the sectors 114, 116 and 118. In such event, and in oneembodiment of the invention, the state machine 312 then causessubstitute data to be loaded into latch 224 a for displacing the datathat results from the internal data load operation from reading thememory cells. The displacement of the internally loaded lower or firstpage data by means of substitute data occurs only for the data latchesof the modules controlling the programming of memory cells for whichthere is insufficient upper or second page data. In the example of FIGS.6A and 6B, this occurs only for the memory cells in sectors 114, 116 and118. For the data latches 224 a in modules for controlling theprogramming of the memory cells in sector 112, the data in latches 224 acontinues to be that which results from the internal data load operationdescribed above. Thus, by keeping track of the boundaries between thedata blocks 112′, 114′, 116′ and 118′, and which one(s) of these sectorsare with or without user or host data, the loading of substitute data toreplace those read in internal data load is performed only for the cellsin sectors of the page that do not have second or upper page data. Inone embodiment, the page boundary is monitored by the controllercircuitry 310 for controlling the programming of the memory cells. Asdescribed in more detail below, the controller circuit or circuitry 310stores appropriate flag data or appropriately alters flag data in theflag charge storage cell(s) of the corresponding sectors to indicate thesectors in the row for which there is insufficient host data.

In the embodiment above, substitute data is used to replace the dataloaded into latches 224 a in the different modules when there isinsufficient second or upper page data for programming the correspondingcells. It is noted, however, that the partial page program problemoccurs only for cells that have been programmed to the B′ state duringthe first programming pass. For cells that remain in the erased state Eafter the first programming pass, they can be programmed correctly tostate A or remain correctly in state E as a result of the secondprogramming pass. Therefore, in the embodiment above, it is necessary toload substitute data “1” into only the latches 224 a for programmingcells that are in state B′, and not for those in state E after the firstprogramming pass. This has the effect of preventing the coupling ofprogramming voltages to the cells in state B′ during the second pass.This also has the effect of inhibiting further movement of the B′distribution into the B distribution, so that when subsequent upper pagedata does become available for each of sectors 114, 116, and 118, eachsector will begin programming from either state E or B′. For such cells,or as another alternative for all cells without corresponding second orupper page data, the internal load operation can also be replaced by theoperation of loading “1” into the data latches for programming thesecells. Such and other variations are within the scope of the invention.This embodiment is also not limited to the scheme where the erased stateE represents data “11.”

In a manner similar to that described above in connection with FIGS. 5Aand 5B, in the embodiment above, even though the B′ distribution ofcells without second or upper page data may have been broadened due tothe Yupin effect when adjacent cells are subsequently programmed, thecharge levels in such broadened B′ states are still below those of thenext higher state C.

The above-described loading of data into latch 224 a to displace thedata that results from the internal data load by reading the memorycells may be performed in a manner transparent to the user or host bythe control circuitry 310, including the state machine 312.Alternatively, such operation can be achieved by changing the programsequence. Instead of adding a new command in the program algorithm, zonedetection circuits may also be used to detect which zones or sectors arebeing programmed by the user or host, and select the rest of thesector(s) or zone(s) to fill in the data “11” in both latches 224 a and224 c in a global reset. All such variations are within the scope of theinvention.

Read Operation

When a page that has been partially programmed is read at a pageboundary, the read algorithm may also need to be modified since the readlevel of memory cells that have been completely programmed may bedifferent from the read level of memory cells that have not beencompletely programmed. This is illustrated in FIGS. 10A and 10B. FIG.10A is a graphical illustration of the threshold voltage leveldistributions of memory cells in group or sector 112 of the row ofmemory cells in the memory array illustrated in FIG. 6A in the exampledescribed above. In such example, all of the memory cells in group orsector 112 have been programmed during the first and second programmingpasses, so that the threshold voltages of these cells have thedistributions E, A, B, C in FIGS. 5C and 10A. For the memory cells insectors 114, 116 and 118, however, these memory cells are either instate E or B′ in FIGS. 5A, 5B or 10B. To obtain the upper or second pagedata represented by the threshold voltages of the cells in all foursectors 112, 114, 116 and 118, the memory cells are read at twodifferent read levels: Va and Vc and voltage sense mode will be assumed.In order to obtain the code scheme for the upper or second page of“1001” indicated in FIGS. 5C and 10A, the convention when the read levelVa is employed is different from (and actually opposite to) that usedwhen the read level Vc is used. Thus, in reference to FIG. 11A, when theread level Va is used, if the cell's threshold voltage is below (or morenegative) than Va, the upper page value corresponding to such thresholdvoltage is a “1,” For the read level Vc, however, the opposite is thecase. Thus, for the read level Vc, if the threshold voltage of a memorycell is above Vc, such threshold voltage corresponds to an upper orsecond page value of “1”, but if the threshold is below Vc suchthreshold voltage corresponds to an upper or second page value of “0.”When such convention is used, the upper or second page values thatcorrespond to the states E, A, B, C are shown in FIG. 11A. When the twovalues resulting from the two readings with the read levels Va and Vcare combined in an logical OR operation, the combination yields the codescheme “1001” for the second or upper page illustrated in FIGS. 5C and10A. Thus, the combination of the two values resulting from the tworeads for states E and C results in an upper or second page value of“1”, while the combination of the two readings resulting from states Aand B results in an upper or second page value of “0.”

The same convention as that described above for reading the memory cellsin group or sector 112 is also applied for reading the partiallyprogrammed memory cells in groups or sectors 114, 116 and 118 so that acommon algorithm can be used for simultaneously reading all cells alongthe selected word line. The readings are then combined in a similarmanner in a logical OR operation to give values for the upper or secondpage as illustrated in FIG. 11A. Such upper or second page values arethen stored in latch 224 c, shifted to latch 224 a and to bus 231through I/O interface 226 by means of the processor 222 in FIG. 9. Fromthe above, it is observed that the same set of read levels (Va and Vc)may be used for reading the upper or second page value of all the memorycells, whether they have been completely programmed or only partiallyprogrammed.

When the lower or first page value is read, however, the result will bedifferent depending on whether all the memory cells in a page have beencompletely programmed or not. Thus, for the memory cells in group orsector 112, all of the cells have been programmed to states E, A, B andC as shown in FIG. 10A, so that the read level to be applied is Vb. Thememory cells in groups or sectors 114, 116 and 118 have only beenprogrammed in the first programming pass and not in the secondprogramming pass so that their threshold voltage distributions will beas shown in FIGS. 5A, 5B or 10B. As described above in reference to FIG.5B, the distribution B′ in FIGS. 5B and 10B has broadened due to theYupin effect. When lower or first page data is to be read from the cellsin groups or sectors 114, 116 and 118, the read level should be Vainstead of Vb.

In one embodiment, the memory cells in all sectors 112, 114, 116 and 118are all read sequentially with read level Vb and then read with readlevel Va, with the results illustrated in FIG. 11B. The convention usedin both reads is such that if the threshold voltage is below Vb thelower or first page bit value is a “1,” and if the threshold voltage isabove Vb the lower or first page bit value is a “0.” As will be observedfrom FIG. 11B, when a memory cell in group or sector 112 is read, onlythe reading using the read level Vb will be valid and when a memory cellin any one of the groups or sectors 114, 116 and 118 is read, only thereading using the read level Va is valid. In one embodiment, tofacilitate the two reading operations using two different read levels,the lower or first page value resulting from a reading operation usingthe read voltage Vb is stored in latch 224 c and the lower or first pagevalue obtained using the read level Va is stored in latch 224 b. Then,depending upon whether the memory cell that is being read has beencompletely programmed or only partially programmed, the value in one ofthe two latches 224 b and 224 c is shifted to latch 224 a and sent tothe data bus 231 through interface 226 as the lower or first page valueread from such cell.

In order to be able to distinguish between cells that have beencompletely programmed from those that have been only partiallyprogrammed, flag charge storage cells are used. As disclosed in earlierreferenced application Ser. No. 10/237,426 and U.S. Pat. No. 6,657,891to Shibata et al., flag cells are incorporated in the row of memorycells in the memory array and these cells are read together with thememory cells in read operations. Thus, employing the same architectureas that described in U.S. Pat. No. 6,657,891 (e.g. described in relationto FIG. 3), corresponding flag charge storage cells may also beincorporated in each of at least some of the rows in memory array 300.Each of the sectors contains at least one corresponding flag chargestorage cell. The locations of the corresponding flag cells in thesectors 112, 114, 116 and 118 are indicated by arrows FC in FIG. 6A. Asdescribed in one implementation in the Shibata patent, during the firstprogramming pass, the first or lower page bit of the flag cells remainsa “1” and is not changed to a “0.” During the second programming passfor programming the second page, the second or upper page bit of theflag cells is changed from a “1” to a “0” to indicate that the secondprogramming pass has been performed. As described above, during thesecond programming pass, the memory cell is read to obtain the lowerpage bit value in that internal data load process. Preferably, duringthis internal data load process, the lower or first flag bit is alsochanged from “1” to “0.” Therefore, after the second programming passhas been completed, both the upper and lower (second and first) flagbits of the flag cells have been changed from “11” to “00.” In oneembodiment, the changing of the bit values of the first and second(lower and upper) pages may be performed by control circuitry 310;alternatively the appropriate bit values may be stored in the flagcell(s) by control circuitry 310.

The values of the flag data can also be used to mark a boundary of thehost or user data, such as the end of the host or user data. In theexample above, the flag data in the flag cell(s) of the sector or groupthat have been programmed during the second pass would have the values“00,” whereas the flag data in the flag cell(s) of the sector or groupthat have not been programmed during the second pass would have thevalues “11.” A boundary of the host or user data stored in the chargestorage elements in two adjacent sectors or groups is then indicatedwhen the bit values of the flag cell(s) of the two adjacent sectors orgroups change between “11” and “00.” The end of the host or user datamay be indicated at the juncture between two adjacent sectors or groups(such as two among a plurality of sectors or groups controlled by acommon word line) whose flag data change from “11” to “00” across thejuncture. By keeping track of the values of the flag data, it ispossible to prevent erroneous results, such as from reading the chargestorage elements as explained below.

In a read operation, the read level depends upon whether a memory cellto be read has been completely programmed or only partially programmed.This can be ascertained by reading the flag bits embedded within the rowof memory cells that is to be read. As noted above, during the internaldata load process of the second programming pass, the lower or firstflag bit is also changed from “1” to “0.” Hence, when this lower orfirst flag bit is read, the correct read level can be determined: ifthis bit is a “1,” the read level is Va, but if this bit is a “0,” theread level is Vb. This is true also for reading memory cells in most ofthe rows in memory array 300 where all the memory cells have beencompletely programmed, except at the page boundary where a page has onlybeen partially programmed. Therefore, by setting each of the two flagbits to “0,” the lower or first page read of the memory cells in a pagecan be completed together with a reading of the first or lower flag bitfor the page with read level Vb. Therefore, in most instances where theentire page has been completely programmed, the flag bits can be sensedand the state machine adjusted so that there will be no need for asecond read operation with the read level Va. Hence depending on theresult of reading the flag data, a different sequence of read levels maybe applied for reading the lower or first page value from the cells.Where the flag data indicates that all of the cells in a page have beencompletely programmed, then only one read operation with read level Vbwill suffice whereas where the flag data indicates that not all of thecells in a page have been completely programmed, then two readoperations with read level Vb followed by read level Va will be needed.Thus, different read sequences are available, and the appropriatesequence is selected for use depending on the value of the flag datathat is read.

From the above, it will be evident that more time will be needed forreading a partially programmed page, since the lower or first page datais read sequentially at two different read levels for the sectors in thepage that have not been completely programmed. For this purpose, thestate machine 312 in control circuitry 310 in FIGS. 8A and 8B sends abusy signal through a ready/busy signal line (not shown separately) inbus 301 to the host controller when it is determined that there isinsufficient data to fill a page. This state machine then adjusts itstiming signals to allow more time for the read operation of the memorycells that have not been completely programmed. Control circuitry 310 inturn notifies the host controller to let the user know that there willbe more latency in reading the data from the flash memory.

Where the threshold voltages or storage levels are read with cachetiming using dummy time period, when change of the flag bits from “11”to “00” is detected, the state machine in control circuitry 310 wouldincrease the length of dummy time periods for reading the storage levelsof the threshold voltages to allow more time for reading sequentially attwo different read levels.

FIG. 12 is a graphical illustration of the threshold voltagedistributions and the data they represent according to a novelalternative code scheme to illustrate an alternative embodiment of theinvention. A comparison of FIGS. 10A and 12 will reveal that the twocode schemes differ in that, in the new code scheme in FIG. 12, thethreshold voltage distribution B represents “10” and the thresholdvoltage distribution C represents “00.” In the code scheme in FIG. 10A,however, the distribution B represents “00” and distribution Crepresents “10.” A comparison of FIGS. 10A and 12 also reveal that thefour different distributions E, A, B, C in both code schemes have thesame lower or first page values “1100.” Using the new code scheme inFIG. 12, during the first programming pass, memory cells are either notprogrammed so that they remain at state E when the host data is “1,” oris programmed to distribution B′ if the host data is “0.” During thesecond programming pass, if the upper or second page bit value is “1,”the memory cell is not programmed so that it remains at distribution Eor is tightened to distribution B. If the user data is a “0,” then thememory cell is programmed to distribution A or C, depending upon theinitial distribution of the memory cell after the first programmingpass. Thus, the new code scheme of FIG. 12 also reduces the Yupin effectin a manner analogous to that of the code scheme in FIGS. 5C and 10A.

From FIG. 12, it will be evident that the upper or second page value forstates E and B at the first programming pass are both “1.” This meansthat where there is insufficient host or user data to fill an entirepage, when the user data in the data latches is used to program thememory cells in a second programming pass, the memory cells for whichthere is insufficient upper or second page data will not be programmedto an erroneous distribution. This is true whether the cell is in stateE or state B′, unlike the situation using the code scheme in FIGS. 5Cand 10A. Referring again to the example in FIG. 6B, when the host datahas the data “0” for the first or lower page, but no data for the secondor upper page for the location 122′, the default value for the second orupper page for the location is a “1” so that location 122′ would befilled with the value “10.” This value requires programming todistribution C according to the code scheme in FIG. 10A, but todistribution B according to the code scheme in FIG. 12. Since the loweror first page value of host data is a “0,” the corresponding memory cellin sector 114 has already been programmed to state B′ in the firstprogramming pass and only needs to be moved slightly to state B. Notethat in contrast to the previous embodiment in which the individualsectors 114, 116, or 118 remain in state E or B′, in this embodiment assoon as the first sector 112 is programmed with upper page data, allother cells in that page that were previously in state B′ are moved tostate B. Therefore, when fresh host data becomes again available forprogramming the second or upper page of memory cells in sectors 114, 116and 118 of the page, the memory cells in these sectors are already atthe correct threshold voltage distributions.

It is observed that using the code scheme illustrated in FIG. 12, thepartial page program described above will not occur. The partial pageprogram problem can be solved using code schemes that are different fromthat of FIG. 12 in the same vein, if the two possible storage levels forcells after the first programming pass are represented by the same valuefor the second or upper page. Where the two possible states are theerased (or reset) and B states in FIGS. 5C and 10A, the second pagevalues for both states are preferably the same. The partial page programproblem will then not occur.

Since the partial page program problem does not occur with the codescheme in FIG. 12, there is no need to have distinct flag storage cellsfor each sector of the page. It is also noted from FIG. 12 that both theupper and lower (first and second) page bit values change betweendistributions A and B in the code scheme in FIG. 12, so that the codescheme is not a Gray code. This means that if the distribution driftsfrom B to A (for example, through various kinds of disturb mechanismwell know in the art), bit errors will be found in two pages of logicaldata, and more error correction (ECC) bits may be desirable when theusing this code scheme. Furthermore, to obtain the upper or second pagevalue information from the memory cells, it may be necessary to read atthree different read levels so that the reading time is longer comparedto that employing the code scheme of FIG. 10A. The code scheme of FIG.12, however, is advantageous in that it does not require extra datalatches such as data latch 224 b in FIG. 9.

One possible alternative to the above designs is to enable the fourgroups 112, 114, 116 and 118 in FIG. 6A of cells to be controlled byread/write modules that are separately controlled. This would providemore flexibility in solving the partial page program problem, but wouldincrease the die size of the memory device. One advantage of both theschemes of FIG. 10 and FIG. 12 is that the read/write modules may becontrolled in a simpler manner, so that the die size will not beincreased, or be increased by small amounts.

While the invention has been described above by reference to variousembodiments, it will be understood that changes and modifications may bemade without departing from the scope of the invention, which is to bedefined only by the appended claims and their equivalent. For example,while the embodiments are described by reference to operations on NANDarrays, they are applicable to NOR arrays as well; such and othervariations are within the scope of the invention. While the invention isillustrated by reference to rows of memory cells each grouped into foursectors, the rows may be grouped into a larger or fewer number ofsectors, and the same advantages described herein are available for suchdifferent grouping schemes. All references referred to herein areincorporated by reference.

1. A storage device comprising: programmable non-volatile memory cellsof a type that store data as corresponding different levels of charge incharge storage elements, the charge storage levels of said elementsbeing in a reset charge storage level distribution prior to theprogramming; and means for programming the charge storage elements in atleast two passes, wherein during a first pass, selected ones of theelements are programmed into a first storage level distribution, andduring a subsequent second pass, selected ones of the elements in thereset charge storage level distribution are programmed into a secondstorage level distribution and selected ones of the elements in thefirst storage level distribution are programmed into a third storagelevel distribution, the second storage level distribution being betweenthe reset and the first storage level distributions, the first storagelevel distribution being between the second and third storage leveldistributions; wherein when there is insufficient host data to programat least one of the elements during the second pass, said at least oneelement having been programmed into the first storage level during thefirst pass, the programming means causes the charge storage level ofsaid at least one element to be below the charge storage levels of thethird storage level distribution after the second pass.
 2. The storagedevice of claim 1, wherein the programming means loads host data into adata buffer, and couples voltages to the elements according to the datain the data buffer to program the elements to selected storage levels,said programming means loading data into the data buffer after the firstpass so that among the elements, those without corresponding host datain the data buffer are not programmed during the second pass.
 3. Thestorage device of claim 2, wherein the data loaded into the data bufferafter the first pass is not from a host.
 4. The storage device of claim2, wherein the data loaded into the data buffer after the first passcorresponds to the reset charge storage level distribution.
 5. Thestorage device of claim 2, wherein the data loaded into the data bufferafter the first pass causes programming of the elements withoutcorresponding data in the data buffer to be inhibited during the secondpass.
 6. The storage device of claim 2, said programming means includingmeans for controlling memory operations, wherein the voltage levels ofthe elements without corresponding host data in the data buffer and thevoltage levels of the elements with corresponding host data in the databuffer are programmed in a manner transparent to the controlling means.7. The storage device of claim 2, wherein the elements are grouped intoa plurality of groups, said storage device further comprising aplurality of flag charge storage cells, each of said flag charge storagecells storing flag data that indicates whether or not the elements of acorresponding group in the plurality of groups have been programmed inthe second pass, and wherein said programming means reads storage levelsstored in the plurality of groups of elements, wherein the storage levelstored in each of at least some of the elements in one of the groups isread by said programming means by coupling different read voltages tosuch element to obtain a plurality of readings; said programming meansstoring the plurality of readings and selecting only one of theplurality of readings to represent host data stored in each of the atleast some elements according to the flag data stored in the flag chargestorage cell(s) corresponding to said one of the groups.
 8. The storagedevice of claim 2, wherein the elements are grouped into a plurality ofgroups, said storage device further comprising for each group at leastone flag charge storage cell for storing flag data that indicateswhether elements of such group have been programmed or not in the secondpass, the elements in at least two of the plurality of groups controlledby a common word line, wherein said programming means reads the flagdata stored in the flag charge storage cells, so that when the flag dataindicate that the elements in a first one of the at least two groupshave been programmed in the second pass and the elements in a second oneof the at least two groups have not been programmed in the second pass,said programming means reads storage levels stored in the first andsecond groups of elements by coupling different sequences of readvoltages to the elements in the first and second groups.
 9. The storagedevice of claim 8, wherein data represented by storage levels of each ofthe elements in the first and second groups comprises an ordered set ofat least a first and a second variable of binary values, said orderedsets also used for programming the elements wherein the storage level(s)to which the elements are to be programmed during the first pass isdetermined according to at least a value of the first variable, and thestorage level(s) to which the elements are to be programmed during thesecond pass is determined according to at least a value of the secondvariable, and wherein said programming means couples only one readvoltage to elements in the first group to provide values of the firstvariable represented by the storage levels, and couples two differentread voltages to elements in the second group to provide values of thefirst variable represented by the storage levels.
 10. The storage deviceof claim 8, wherein said programming means reads the flag data stored inthe flag charge storage cells corresponding to the at least two groups,so that when the flag data indicate that some but not all of theelements controlled by the common word line have been programmed in thesecond pass, said programming means allots more time for the reading ofelements that have not been programmed in the second pass.
 11. Thestorage device of claim 10, wherein the flag charge storage cells arelocated along the word line to indicate whether the at least two of theplurality of groups of elements along the word line have been programmedduring the second pass, and when the flag data indicate that one or moreof the groups controlled by the word line have not been programmedduring the second pass, said programming means generates a busy signalin a manner to indicate to a user to expect more latency when elementsthat have not been programmed in the second pass are to be read.
 12. Thestorage device of claim 2, wherein data represented by storage levels ofeach of the elements comprises an ordered set of at least a first and asecond variable of binary values, said ordered sets also used forprogramming the elements wherein the storage level(s) to which theelements are to be programmed during the first pass is determinedaccording to at least a value of the first variable, and the storagelevel(s) to which the elements are to be programmed during the secondpass is determined according to at least a value of the second variable,said programming means reading storage levels of the elements bycoupling different read voltages to such elements to provide values ofthe second variable represented by the storage levels, wherein for afirst read voltage, a first value of the second variable indicates thatcurrent in such element during the reading is lower than a threshold anda second value of the second variable indicates that current in suchelement during the reading is higher than the threshold, and for asecond read voltage, the first value of the second variable indicatesthat current in such element during the reading is higher than thethreshold and the second value of the second variable indicates thatcurrent in such element during the reading is lower than the threshold.13. The storage device of claim 12, wherein the first read voltage isbetween the reset level and the second storage level, and the secondread voltage is between the first and third storage levels.
 14. Thestorage device of claim 2, wherein the elements are grouped into aplurality of groups, said storage device further comprising a pluralityof flag charge storage cells each of which storing flag data thatindicates whether the elements of a corresponding group in the pluralityof groups have been programmed in the second pass, wherein saidprogramming means reads storage levels stored in the plurality of groupsof elements with cache timing, said cache timing including dummy timeperiods, wherein the dummy time period(s) for reading the storage levelsstored in the elements in one of the groups that have not beenprogrammed in the second pass are longer than the dummy time period(s)for reading the storage levels stored in the elements in another one ofthe groups that have been programmed in the second pass.
 15. The storagedevice of claim 2, wherein the elements are grouped into a plurality ofgroups, each group including at least one flag charge storage cell forstoring flag data that indicates whether elements of such group havebeen programmed or not in the second pass, at least two of the pluralityof groups controlled by a common word line, wherein when there issufficient host data to program at least one but not all of the at leasttwo groups during the second pass, said programming means stores oralters flag data in at least one of the flag charge storage cells in theat least two groups to indicate a boundary of the host data.
 16. Thestorage device of claim 15, wherein two groups that are among the atleast two groups are located adjacent to each other, wherein theelements in a first one of the two adjacent groups have been programmedin the second pass and the elements in the second one of the twoadjacent groups have not been programmed in the second pass, and whereinsaid programming means stores flag data in at least one of the flagcells of the two adjacent groups such that the flag data stored in theflag cell(s) of the first group are different from the flag data storedin the flag cell(s) of the second group to indicate that host databoundary is located between the two adjacent groups.
 17. The storagedevice of claim 1, the storage device including a data buffer, saidprogramming means loading host data into the data buffer, and couplingvoltages to the elements according to the data in the data buffer toprogram the elements to selected storage level distributions accordingto a code scheme, said code scheme being such that among the elements,programming voltages are not coupled to those elements withoutcorresponding host data in the data buffer during the second pass. 18.The storage device of claim 17, wherein the code scheme is not a greyGray code.
 19. The storage device of claim 17, wherein data representedby storage levels of each of the elements comprises an ordered set of atleast a first and a second variable of binary values, said ordered setsalso used by said programming means for programming the elements whereinthe storage level(s) to which the elements are to be programmed duringthe first pass is determined according to at least a value of the firstvariable, and the storage level(s) to which the elements are to beprogrammed during the second pass is determined according to at least avalue of the second variable, and wherein the code scheme is such thatvalues of the second variable representing the reset and first storagelevels are the same.
 20. The storage device of claim 19, saidprogramming means reading storage levels stored in the elements bysequentially coupling three different read voltages to such element toobtain a value for the second variable.
 21. The storage device of claim1, the storage device including a data buffer, said programming meansloading host data into a data buffer, and coupling voltages to theelements according to the data in the data buffer to program theelements to selected storage levels according to a code scheme, saidcode scheme being such that among the elements, charge storage levels ofthe elements without corresponding host data in the data buffer arebelow the charge storage levels of the third storage level distributionafter the second pass.
 22. The storage device of claim 21, wherein saidprogramming means causes the charge storage levels of the elementswithout corresponding host data in the data buffer to have adistribution that is different from the first storage level distributionas a result of field effect coupling.
 23. The storage device of claim21, wherein the code scheme is not a Gray code.
 24. The storage deviceof claim 21, wherein data represented by storage levels of each of theelements comprises an ordered set of at least a first and a secondvariable of binary values, said ordered sets also used for programmingthe elements wherein the storage level(s) to which the elements are tobe programmed during the first pass is determined according to at leasta value of the first variable, and the storage level(s) to which theelements are to be programmed during the second pass is determinedaccording to at least a value of the second variable, and wherein thecode scheme is such that values of the second variable representing thereset and first storage levels are the same.
 25. The storage device ofclaim 24, said programming means reading storage levels stored in theelements by sequentially coupling three different read voltages to suchelement to obtain a value for the second variable.
 26. A storage devicecomprising: non-volatile charge storage elements of a type that storedata as corresponding different charge storage levels: means forprogramming the charge storage elements in at least two passes into oneof more than two charge storage levels for storing data, wherein thecharge storage elements are grouped into a plurality of groups, eachgroup including at least one corresponding flag charge storage cell forstoring at least two bits of flag data, each bit of the flag data beingassociated with one of the passes; wherein said programming meansprograms the charge storage elements in at least two sequential passescomprising a prior pass and a subsequent pass that is carried out afterthe prior pass, and causes a value of the flag data bit associated withthe prior pass to be set after the prior pass.
 27. The storage device ofclaim 26, wherein the value of the flag data bit associated with theprior pass is set during said subsequent pass.
 28. The storage device ofclaim 26, wherein said programming means causes the value of the flagdata bit associated with the prior pass stored in a flag charge storagecell of one of the plurality of groups to be set to indicate whether thecharge storage elements of the group have been programmed or not in thesubsequent pass.
 29. The storage device of claim 28, wherein saidprogramming means causes the value of the flag data bit associated withthe prior pass to be altered from a value indicating a reset chargestorage level to a value different from said reset charge storage level.30. The storage device of claim 28, wherein data represented by chargestorage levels of each of the charge storage elements in the groupscomprises an ordered set of at least a first and a second variable ofbinary values, and the charge storage levels to which the charge storageelements are to be programmed during the prior pass is determinedaccording to at least a value of the first variable, and the chargestorage levels to which the charge storage elements are to be programmedduring the subsequent pass is determined according to at least a valueof the second variable, wherein said programming means senses the chargestorage levels of each of the charge storage elements in the groups inorder to read the values of the first variable, and the charge storagelevels of the flag charge storage cells in the groups to read the valuesof the flag data bits associated with the prior pass in one sensingoperation.
 31. The storage device of claim 30, wherein the chargestorage elements are grouped into pages, each page comprising two ormore of the groups, wherein said programming means programs the chargestorage elements in each of the pages at a time, and couples only oneread voltage to the charge storage elements in each page that has beenprogrammed in the subsequent pass to provide values of the firstvariable, and couples two different read voltages sequentially to thecharge storage elements in each page that contains at least one chargestorage element that has not been programmed in the subsequent pass andat least one charge storage element that has been programmed in thesubsequent pass to provide values of the first variable.
 32. The storagedevice of claim 31, wherein said programming means allots more time forreading each page that contains at least one charge storage element thathas not been programmed in the subsequent pass and at least one chargestorage element that has been programmed in the subsequent pass toprovide values of the first variable.
 33. The storage device of claim32, said programming means generating a busy signal to indicate to auser to expect more latency when charge storage elements that have notbeen programmed in the subsequent pass are to be read.
 34. The storagedevice of claim 32, wherein more time is allotted by said programmingmeans by using dummy time periods of different lengths.
 35. The storagedevice of claim 26, wherein the charge storage elements are grouped intopages, each page comprising two or more of the groups, and saidprogramming means programs the charge storage elements in one of thepages at a time, and wherein one of the pages contains at least a firstgroup of charge storage elements that have been programmed in thesubsequent pass according to host data, and at least a second group ofcharge storage elements that have not been programmed in the subsequentpass due to insufficient host data for programming, and wherein saidvalues of the flag data bits associated with the prior pass stored inthe flag charge storage cells in the first and second groups indicate aboundary between charge storage elements with sufficient host data andcharge storage elements with insufficient host data.
 36. The storagedevice of claim 26, said programming means reading data stored in saidcharge storage elements of the groups according to a read sequenceselected from a plurality of different read sequences according to saidvalues of the flag data bits associated with the prior pass stored inthe flag charge storage cells in the groups.